SiC MOSFETs · CV-SiC-1200-80
CV-SiC-1200-80 1200 V 80 mΩ MOSFET
Higher Rds(on) 1200 V device for lower-power isolated converters where switching loss dominates conduction loss.
Higher Rds(on) 1200 V device for lower-power isolated converters where switching loss dominates conduction loss.
Quality note: Specified to meet applicable industry standards. Bureau Veritas certified quality system. Shorter lead-time builds available on qualified demand.
Key specifications
| Vds | 1200 V |
|---|---|
| Rds(on) typ | 80 mΩ |
| Package | TO-247-3 |
| Tj max | 175 °C |
Typical applications
- Auxiliary DC-DC
- Isolated industrial supplies
Use-case examples are typical, not a substitute for your design review, SOA analysis, and qualification plan.